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| NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collctor-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 1mA, IB = 0, Note 2 V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO IEBO VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = +100C Emitter Cutoff Current VEB = 4V, IC = 0 180 180 6 - - - - - - - - - - - - 50 50 50 V V V nA nA nA Symbol Test Conditions Min Typ Max Unit Note 2 Pulse Test: Pulse Width = 300s, Duty Cycle = 2.0%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 2) DC Current Gain hFE VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA VCE = 5V, IC = 50mA Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure fT Cobo Cibo hfe NF VCE = 10V, IC = 10mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VBE = 0.5V, IC = 0, f = 1MHz VCE = 10V, IC = 1mA, f = 1kHz VCE = 5V, IC = 250A, RS = 1k, f = 10Hz to 15.7kHz 100 - - 50 - - - - - - 300 6 20 200 8.0 dB MHz pF pF 80 80 30 - - - - - - - - - - - - 250 - 0.15 0.20 1.0 1.0 V V V V Symbol Test Conditions Min Typ Max Unit Note 2 Pulse Test: Pulse Width = 300s, Duty Cycle = 2.0%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
Price & Availability of NTE194
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